Shuangyuan Technology

Solution Overview

Leveraging high-precision machine vision and spectral thickness measurement technology, Dual-Source Technology enables wafer surface defect identification, nanometer-level thickness measurement, and non-destructive internal structure inspection, helping customers enhance yield rates and process stability. Through AI algorithm optimization and multi-dimensional data fusion, we deliver efficient, precise intelligent inspection solutions for advanced processes, empowering high-quality development in semiconductor manufacturing.

Related Products

Building on its deep expertise in industrial vision and inline measurement and control, Shuangyuan Technology integrates and advances cross-industry technologies to deliver high-precision, high-stability measurement solutions for critical semiconductor manufacturing processes.
These solutions empower customers to optimize process control and significantly enhance production yield and consistency.

AOI Wafer Defect Inspection

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SiC Wafer Dislocation Defect Inspection

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Spectral Confocal

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Technical Advantages

By integrating multi-modal metrology and intelligent analytics, Shuangyuan Technology achieves nanometer-level precision in measuring critical dimensions and defects, enabling closed-loop process control across the entire semiconductor manufacturing flow.
These capabilities provide accurate yield assurance for advanced process nodes.

Multi-Modal Optical Solutions

Combines wide-field illumination, coherent interferometry, and other optical modalities to deliver comprehensive metrology coverage.

AI-Powered Surface Inspection

Performs high-speed, high-accuracy defect detection and classification, tracing root causes to enhance product quality. Utilizes high-energy radiation and 3D imaging technologies for non-destructive internal inspection, precisely locating micro-bubbles, crystal defects, and other nanometer-scale anomalies.

Non-Contact, Non-Destructive Testing

Employs advanced sensing technologies to obtain accurate quality data without physical contact or damage to the wafer.

Internal Defect Detection

Uses high-energy radiation and 3D tomography to visualize the wafer’s internal structure, identifying micro-voids and crystal irregularities with nanometer precision.

Dislocation Defect Detection

Accurately captures lattice-mismatch-induced dislocations under non-destructive conditions, ensuring detailed structural integrity analysis.